教师姓名:林智
邮箱地址:linzhi@cqu.edu.cn
工作电话:未公开

林智,副教授,博士,IEEE Member

Emaillinzhi@cqu.edu.cn

通信地址:重庆市沙坪坝区沙正街174号重庆大学A区主教1003

邮编400044

个人简历

2009年本科毕业于电子科技大学,201512月获得电子科技大学微电子学与固体电子学博士学位,20162月加入重庆大学微电子与通信工程学院集成电路设计与工程系。先后承担国家自然科学基金项目、省部级和横向科研项目10余项,在IEEE Transaction on Electron DeviceIEEE Electron Device LettersElectron Letters等学术期刊上发表多篇研究论文,授权中国发明专利3项、美国发明专利1项。

研究领域

1)新型半导体功率器件芯片设计及其应用

2)电源管理集成电路芯片设计与功率电子系统

研究生招生方向

学术硕士:信息与通信工程(081000

专业硕士:电子信息(085400

热烈欢迎电子、电气、物理和材料等相关专业学生加入课题组!

主持科研项目

[1]  国家自然科学基金面上项目(No. 62074020,在研)

[2]  国家自然科学基金青年科学基金项目(No. 61604024,结题)

[3]  重庆市科技计划项目基础科学与前沿技术研究专项(一般项目)(No. cstc2018jcyjAX0706,在研)

[4]  中央高校基本科研业务费专项项目(No.106112016CDJXY160003,结题)

代表性论文

[1] Z.Lin, J. Guo, Z.Wang, S. Hu, J. Zhou and F. Tang, "Novel Isolation Structure forHigh-Voltage Integrated Superjunction MOSFETs", IEEE Electron DeviceLetters, 2020, 41(1): 115-118.

[2] P. Li, J. Guo, S. Hu. Z. Lin and F. Tang, "A Low ReverseRecovery Charge Superjunction MOSFET With an Integrated Tunneling Diode", IEEETransactions on Electron Devices, 2019, 66(10): 4309-4313.

[3] Z.Lin, "Study onthe Intrinsic Origin of Output Capacitor Hysteresis in Advanced SuperjunctionMOSFETs", IEEE Electron Device Letters, 2019, 40(8): 1297-1300.

[4] Z.Lin, Q. Yuan, S.Hu, X. Zhou, J. Zhou and F. Tang, "A Simulation Study of a NovelSuperjunction MOSFET Embedded With an Ultrasoft Reverse-Recovery BodyDiode", IEEE Transactions on Electron Devices, 2019, 66(5): 2333-2338.

[5] F.Tang, Z. Shu, M. Li, Y. Hu, X. Zhou, S. Hu, Z. Lin, P. Gan, T. Huang and A. Bermak, "A Low Powerand Fast Tracking Light-to-Frequency Converter With Adaptive Power Scaling forBlood SpO2 Sensing", IEEE Transactions on BiomedicalCircuits and Systems, 2019, 13(1): 26-37.

[6] F.Tang, Z. Wang, Y. Xia, F. Liu, X. Zhou, S. Hu, Z. Lin and A. Bermak, "An Area-EfficientColumn-Parallel Digital Decimation Filter With Pre-BWI Topology for CMOS ImageSensor", IEEE Transactions on Circuits and Systems I: Regular Papers, 2018, 65(8): 2524-2533.

[7] X. Xiang, X. Gao, F. Liu, M. Li, S. Huang, X. Chen, X. Zhou, S. Hu, Z. Lin, A. Bermak and F. Tang, "A Radiation-Hardened and ESD-Optimized Wireline Driver with Wide TerminalCommon-Mode Voltage Range",IEEE Transactions on Nuclear Science,2018, 65(1), pp. 566-572.

[8] X. Zhou, S. Li, F. Tang, S. Hu, Z. Lin and L.Zhang, "DANoC: An Efficient Algorithm and HardwareCodesign of Deep Neural Networks on Chip", IEEE Transactions on NeuralNetworks and Learning Systems, 2018, 29(7), pp. 3176-3187.

[9] X. Zhou, F. Yang, Y. Feng, Q. Li, F. Tang, S.Hu, Z. Lin and L. Zhang, " A Spatial-Temporal Method to Detect Global Influenza Epidemics UsingHeterogeneous Data Collected from the Internet", IEEE/ACM Transactions onComputational Biology and Bioinformatics, 2018, 15(3), pp. 802-812.

[10] F. Liu, F. Yang, H. Wang, X. Xiang, X,Zhou, S. Hu, Z. Lin, A. Bermark and F. Tang."Radiation-Hardened CMOS Negative Voltage Reference for AerospaceApplication", IEEE Transactions on Nuclear Science, 64(9):2505-2510, 2017.

[11] K. Cheng, S. Hu, Y. Jiang, Q. Yuan, D.Yang, Y. Huang, J. Lei, Z. Lin, X. Zhou and F. Tang."Simulation-based performance analysis of an ultra-low specificon-resistance trench SOI LDMOS with a floating vertical field plate", Journalof Computational Electronics, 16(1): 83-89, 2017.

[12] Z. Lin, S. Hu, Q. Yuan, X. Zhou and F. Tang,"Low-Reverse Recovery Charge Superjunction MOSFET With a p-type SchottkyBody Diode", IEEE Electron Device Letters, 2017, 38(8): 1059-1062.

[13] F. Tang, Z. Shu, K. Ye, X. Zhou, S. Hu, Z.Linand A. Bermak, "A Linear 126-dB Dynamic RangeLight-to-Frequency Converter With Dark Current Suppression Up to 125 °C forBlood Oxygen Concentration Detection", IEEE Transactions on ElectronDevices, 63(10): 3983-3988, 2016.

[14] Z. Lin and X. Chen, "A New Solution forSuperjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion andField Plates", IEEE Electron Device Letters, 2015, 36(6):558-590.

[15] Z. Lin, H. Huang, and X. Chen, "AnImproved Superjunction Structure With Variation Vertical DopingProfile", IEEE Transactions on Electron Devices, 2015,62(1): 228-231.

[16] B. Yi, Z. LinandX. Chen, "Study on HK-VDMOS with Deep Trench Termination", Superlatticesand Microstructures, 2014, 75(11): 278-286.

[17] B. Yi, Z. Lin and X. Chen,"Snapback-free Reverse-conducting IGBT with Low Turnoff Loss", ElectronLetters, 2014, 50(9): 703-705.

发明专利

[1] Z.Lin, Q. Yuan, S. Han, S. Hu, J. Zhou, F. Tang, X. Zhou, HIGH-SPEED SUPERJUNCTIONLATERAL INSULATED GATE BIPOLAR TRANSISTOR, 专利号:US16/264654.

[2] 林智,袁琦,韩姝,胡盛东,周建林,唐枋,周喜川,一种有两种载流子导电的超结功率MOSFET,专利号:ZL201810137190.X.

[3] 林智,袁琦,韩姝,胡盛东,周建林,唐枋,周喜川,一种带软恢复体二极管的超结功率MOSFET, 专利号:ZL201810072735.3.

[4] 林智,袁琦,韩姝,胡盛东,周建林,唐枋,周喜川,一种高速超结横向绝缘栅双极型晶体管,专利号:ZL201810137194.8.

[5] 林智,王志皓,韩姝,李平,胡盛东,单片集成式半桥功率器件模块,申请号:CN201911168608.4.